Raman and HRTEM investigations of Ge nanocrystals produced by Ge + -ion implantation of SiO2 films and subsequent high-pressure annealing

Raman and HRTEM investigations of Ge nanocrystals produced by Ge + -ion implantation of SiO2 films and subsequent high-pressure annealing

Author(s):

Tyschenko, I.E. ( Institute of Semiconductor Physics (Russia) )

Talochkin, A.B. ( Institute of Semiconductor Physics (Russia) )

Cherkov, A.G. ( Institute of Semiconductor Physics (Russia) )

Zhuravlev, K.S. ( Institute of Semiconductor Physics (Russia) )

Misiuk, A. ( Institute of Electron Technology (Poland) )

Yankov, R.A. ( North Carolina State Univ. (USA) )

Skorupa, W. ( Forschungszentrum Rossendorf (Germany) )

2 more

Publication title:

Solid State Crystals 2002: Crystalline Materials for Optoelectronics

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5136

Pub. Year:

2003

Page(from):

236

Page(to):

242

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819450043 [0819450049]

Language:

English

Call no.:

P63600/5136

Type:

Conference Proceedings

Details

TDL ID:	ZA00013124
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	2002 : 3rd
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	2002.10.14-2002.10.18

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