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Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process

Author(s):
Park, D.-I. ( Photronics-PKL (South Korea) )
Park, E.-S. ( Photronics-PKL (South Korea) )
Lee, J.-H. ( Photronics-PKL (South Korea) )
Jeong, W.-G. ( Photronics-PKL (South Korea) )
Seo, S.-K. ( Photronics-PKL (South Korea) )
Kwon, H.-J. ( Photronics-PKL (South Korea) )
Kim, J.-M. ( Photronics-PKL (South Korea) )
Jung, S.-M. ( Photronics-PKL (South Korea) )
Choi, S.-S. ( Photronics-PKL (South Korea) )
4 more
Publication title:
Photomask and Next-Generation Lithography Mask Technology X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5130
Pub. date:
2003
Page(from):
78
Page(to):
85
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449962 [0819449962]
Language:
English
Call no.:
P63600/5130
Type:
Conference Proceedings

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