Computer simulation and reverse engineering of trap-assisted generation-recombination noise in advanced silicon MOSFETs (Invited Paper)

Computer simulation and reverse engineering of trap-assisted generation-recombination noise in advanced silicon MOSFETs (Invited Paper)

Author(s):

Bosman, G. ( Univ. of Florida (USA) )
Hou, F.-C. ( Univ. of Florida (USA) )
Martin, D.O. ( Univ. of Florida (USA) )
Sanchez, J.E. ( Univ. of Florida (USA) )

Publication title:

Noise in Devices and Circuits

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5113

Pub. Year:

2003

Page(from):

232

Page(to):

236

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449733 [0819449733]

Language:

English

Call no.:

P63600/5113

Type:

Conference Proceedings

Details

TDL ID:	ZA00013101
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Fluctuations and Noise : Noise in Devices and Circuits
Conf. info. (Number):	2003
Conf. info. (Venue):	Santa Fe, NM, USA
Conf. info. (Date):	2003.06.02-2003.06.04

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