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Generation-recombination noise in GaN and GaN-based devices (Invited Paper)

Author(s):
Pala, N. ( Rensselaer Polytechnic Institute (USA) and Sensor Electronic Technology, Inc. (USA) )
Rumyantsev, S.L. ( Rensselaer Polytechnic Institute (USA) )
Shur, M.S. ( Rensselaer Polytechnic Institute (USA) )
Levinshtein, M.E. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Khan, M.A. ( Univ. of South Carolina (USA) )
Simin, G.S. ( Univ. of South Carolina (USA) )
Gaska, R. ( Sensor Electronic Technology, Inc. (USA) )
2 more
Publication title:
Noise in Devices and Circuits
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5113
Pub. Year:
2003
Page(from):
217
Page(to):
231
Pages:
15
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819449733 [0819449733]
Language:
English
Call no.:
P63600/5113
Type:
Conference Proceedings

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