Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

Uniform acceptor distribution in neutron-transmutation-doped far-infrared p-Ge lasers

Author(s):

Nelson, E.W. ( Univ. of Central Florida (USA) )

Kleckley, S.H. ( Zaubertek, Inc. (USA) )

Vernetson, W.G. ( Univ. of Florida (USA) )

Tsipin, V.Z. ( Uzbekistan Academy of Science (Uzbekistan) )

3 more

Publication title:

Laser systems technology : 21-23 April 2003, Orlando, Florida, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5087

Pub. Year:

2003

Page(from):

133

Page(to):

140

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819449467 [0819449466]

Language:

English

Call no.:

P63600/5087

Type:

Conference Proceedings

Details

TDL ID:	ZA00013075
Series ID:	PA00000029
Conf. info. (Name):	Defense, Security, and Sensing : Laser Systems Technology
Conf. info. (Number):	2003
Conf. info. (Venue):	Oriando, FL, USA
Conf. info. (Date):	2003.04.21-2003.04.23

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