Device characteristics of sub-20-nm silicon nanotransistors
- Author(s):
- Saha, S. ( Silicon Storage Technology, Inc. (USA) )
- Publication title:
- Design and process integration for microelectronic manufacturing II : 26-28 February 2003, Santa Clara, California, USA
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5042
- Pub. Year:
- 2003
- Page(from):
- 172
- Page(to):
- 179
- Pages:
- 8
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819448477 [0819448478]
- Language:
- English
- Call no.:
- P63600/5042
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Drain profile engineering for MOSFET devices with channel lengths below 100 nm
SPIE - The International Society for Optical Engineering |
American Institute of Chemical Engineers |
SPIE-The International Society for Optical Engineering, Narosa |
8
Conference Proceedings
On the Efficiency and Transmission Characteristics of a 1:20 Model Fixed Wave Energy Device
American Society of Mechanical Engineers |
Electrochemical Society |
MRS-Materials Research Society |
Society of Photo-optical Instrumentation Engineers |
10
Conference Proceedings
Active building blocks for silicon photonic devices (Invited Paper) [6017-20]
SPIE - The International Society of Optical Engineering |
MRS - Materials Research Society |
SPIE-The International Society for Optical Engineering |
American Institute of Chemical Engineers |
SPIE - The International Society of Optical Engineering |