Process latitude extension in low k1 DRAM lithography using specific layer-oriented illumination design

Process latitude extension in low k1 DRAM lithography using specific layer-oriented illumination design

Author(s):

Kang, Y.S. ( Samsung Electronics Co., Ltd. (South Korea) )

Nam, D.-S. ( Samsung Electronics Co., Ltd. (South Korea) )

Hwang, C. ( Samsung Electronics Co., Ltd. (South Korea) )

Woo, S.-G. ( Samsung Electronics Co., Ltd. (South Korea) )

Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) )

Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) )

1 more

Publication title:

Optical Microlithography XVI

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5040

Pub. Year:

2003

Vol.:

Part Three

Page(from):

1304

Page(to):

1309

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448453 [0819448451]

Language:

English

Call no.:

P63600/5040

Type:

Conference Proceedings

Details

TDL ID:	ZA00013031
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	2003 : 16th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2003.02.25-2003.02.28

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