Blank Cover Image

Adaptability and validity of thin organic bottom anti-reflective coating (BARC) to sub-90-nm patterning in ArF lithography

Author(s):
Kim, S.-H. ( Samsung Electronics Co., Ltd. (South Korea) )
Lee, S.-H. ( Samsung Electronics Co., Ltd. (South Korea) )
Yeo, G.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
Lee, J.H. ( Samsung Electronics Co., Ltd. (South Korea) )
Cho, H.-K. ( Samsung Electronics Co., Ltd. (South Korea) )
Han, W.-S. ( Samsung Electronics Co., Ltd. (South Korea) )
Moon, J.-T. ( Samsung Electronics Co., Ltd. (South Korea) )
2 more
Publication title:
Advances in Resist Technology and Processing XX
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5039
Pub. Year:
2003
Vol.:
2
Pt.:
Poster Session
Page(from):
940
Page(to):
947
Pages:
8
Pub. info.:
Bellingham, CA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448446 [0819448443]
Language:
English
Call no.:
P63600/5039
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Realization of sub-80-nm small-space patterning in ArF photolithography

Kim, S.-H., Kim, H.-D., Lee, S.-H., Park, C.-M., Ryoo, M.-H., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, …

SPIE - The International Society of Optical Engineering
7 Conference Proceedings Silicon-based anti-reflective spin-on hardmask materials for 45 nm pattern of immersion ArF lithography

S. K. Kim, H. M. Cho, S. R. Koh, M. Kim, H. C. Yoon

Society of Photo-optical Instrumentation Engineers
2 Conference Proceedings Challenge for effective OCV control in 90-nm logic gate using ArF lithography

Kang, H.-J., Lee, S.-W., Lee, D.-Y., Yeo, G.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Carbon antireflective coating (ARC) technology for both KrF and ArF lithography

Kim,Y., Lee,J., Cho,H., Moon,J.T.

SPIE-The International Society for Optical Engineering
3 Conference Proceedings Organic ArF bottom anti-reflective coatings for immersion lithography

Z. Xiang, H. Zhuang, H. Wu, J. Shan, D. Abdallah, J. Yin, S. Mullen, H. Yao, E. Gonzalez, M. Neisser

SPIE - The International Society of Optical Engineering
9 Conference Proceedings BARC (bottom anti-reflective coating) for immersion process

Y. Hiroi, T. Kishioka, R. Sakamoto, D. Maruyama, T. Ohashi, T. Ishida, S. Kimura, Y. Sakaida, H. Watanabe

SPIE - The International Society of Optical Engineering
4 Conference Proceedings Comparison of ArF bilayer resists for sub-90 nm L/S fabrication

Hong, J., Kim, H.-W., Lee, S.-H., Woo, S.-G., Cho, H.-K., Han, W.-S.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Organosiloxane based bottom antireflective coatings for 193nm lithography

Son, E.-K., Kim, J.-W., Lee, S.-H., Park, C.-S., Lee, J.-W., Kim, J., Lee, G.-S., Lee, S.-K., Ban, K.-D., Jung, J.-C., …

SPIE - The International Society of Optical Engineering
5 Conference Proceedings Resolution enhanced top anti-reflective coating materials for ArF immersion lithography [6153-74]

Jung, J C, Lee, S K, Ban, K D, Bok C, Kim H S, Moon, S C, Kim, J

SPIE - The International Society of Optical Engineering
11 Conference Proceedings Emergence of assist feature OPC era in sub-130-nm DRAM devices

Kim,B., Kim,I., Yeo,G., Lee,J., Choi,J., Cho,H., Moon,J.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings ArF issues of 90-nm-node DRAM device integration

Goo, D.-H., Kim, B.-S., Park, J.-S., Yoon, K.-S., Lee, J.-H., Cho, H.-K., Han, W.-S., Moon, J.-T.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography

Y.-K. Jang, S. Han, H. Kim, J.-Y. Yoon, S. Lee

Society of Photo-optical Instrumentation Engineers
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12