Mechanistic understanding of post-etch roughness in 193-nm photoresists

Mechanistic understanding of post-etch roughness in 193-nm photoresists

Author(s):

Bae, Y.C. ( Shipley Co. LLC (USA) )

Barclay, G.G. ( Shipley Co. LLC (USA) )

Bolton, P.J. ( Shipley Co. LLC (USA) )

Kavanagh, R.J. ( Shipley Co. LLC (USA) )

Bu, L. ( Shipley Co. LLC (USA) )

Kobayashi, T. ( Shipley Co. LLC (USA) )

Adams, T. ( Shipley Co. LLC (USA) )

Pugliano, N. ( Shipley Co. LLC (USA) )

Thackeray, J.W. ( Shipley Co. LLC (USA) )

4 more

Publication title:

Advances in Resist Technology and Processing XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5039

Pub. Year:

2003

Vol.:

2

Pt.:

Poster Session

Page(from):

665

Page(to):

671

Pages:

7

Pub. info.:

Bellingham, CA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448446 [0819448443]

Language:

English

Call no.:

P63600/5039

Type:

Conference Proceedings

Details

TDL ID:	ZA00013027
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	2003 : 20th
Conf. info. (Venue):	Santa Clara, CA
Conf. info. (Date):	2003.02.24-2003.02.26
Note for article:	Poster Session ; 5039-74

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