Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography

Polyhedral oligomeric silsesquioxane (POSS) based resist materials for 157-nm lithography

Author(s):

Tegou, E. ( Institute of Microelectronics, NCSR Demokritos (Greece) )

Bellas, V. ( Institute of Microelectronics, NCSR Demokritos (Greece) )

Gogolides, E. ( Institute of Microelectronics, NCSR Demokritos (Greece) )

Argitis, P. ( Institute of Microelectronics, NCSR Demokritos (Greece) )

Dean, K.R. ( International SEMATECH (USA) )

Eon, D. ( Univ. de Nantes (France) )

Cartry, G. ( Univ. de Nantes (France) )

Cardinaud, C. ( Univ. de Nantes (France) )

3 more

Publication title:

Advances in Resist Technology and Processing XX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5039

Pub. Year:

2003

Vol.:

1

Pt.:

Session 10

Page(from):

453

Page(to):

461

Pages:

9

Pub. info.:

Bellingham, CA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448446 [0819448443]

Language:

English

Call no.:

P63600/5039

Type:

Conference Proceedings

Details

TDL ID:	ZA00013027
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in Resist Technology and Processing
Conf. info. (Number):	2003 : 20th
Conf. info. (Venue):	Santa Clara, CA
Conf. info. (Date):	2003.02.24-2003.02.26
Note for article:	Session 10. Novel Resist Materials ; 5039-49

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