Characterization of 193-nm resist layers by CD-SEM sidewall imaging

Characterization of 193-nm resist layers by CD-SEM sidewall imaging

Author(s):

Marschner, T. ( Infineon Technologies GmbH (Germany) )
Stief, C. ( Applied Materials, Inc. (Germany) )

Publication title:

Metrology, Inspection, and Process Control for Microlithography XVII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5038

Pub. Year:

2003

Vol.:

2

Page(from):

892

Page(to):

900

Pages:

9

Pub. info.:

Bellingham, WA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448439 [0819448435]

Language:

English

Call no.:

P63600/5038

Type:

Conference Proceedings

Details

TDL ID:	ZA00013025
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, Inspection, and Process Control for Microlithography
Conf. info. (Number):	2003 : 17th
Conf. info. (Venue):	Santa Clara, California, USA
Conf. info. (Date):	2003.02.24-2003.02.27
Note for article:	Poster Session ; 5038-106

Similar Items:

1 Conference Proceedings 193-nm resist roughness characterization and process propagation investigation using a CD-SEM Marschner, T., Lee, A., Fuchs, S., Voelkel, L., Stief, C. SPIE - The International Society of Optical Engineering	7 Conference Proceedings 193-nm resist shrinkage carryover effect to a post-etch layer due to CD-SEM measurement Cao, G.X., Wheeler, N.J., Wong, A.S. SPIE - The International Society of Optical Engineering
2 Conference Proceedings Determination of best focus and exposure dose using CD-SEM sidewall imaging Marschner,T., Eytan,G., Dror,O. SPIE-The International Society for Optical Engineering	8 Conference Proceedings 193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process Ferri, J.E., Vieira, M., Reybrouck, M., Mastovich, M.E., Bowdoin, S., Brandom, R., Knutrud, P.C. SPIE-The International Society for Optical Engineering
3 Conference Proceedings CD-SEM image acquisition effects on 193-nm resists line slimming Sullivan, N.T., Mastovich, M.E., Bowdoin, S., Brandom, R. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Reticle imaging and metrology using a CD-SEM at IMEC James,A., Felten,F., Polli,M., England,J.G., Marschner,T., Vandenberghe,G. SPIE - The International Society for Optical Engineering
4 Conference Proceedings Automatic CD-SEM offline recipe creation for OPC qualification and process monitoring in a DRAM pilot-fab environment [6152-99] Kramer, U., Marschner, T., Kaiser, D., Winking, M., Stief, C., Ventola, S., Lewitzki, D., Abraham, Z., Menadeva, O., … SPIE - The International Society of Optical Engineering	10 Conference Proceedings Reducing CD-SEM measurement carryover effect for 193-nm resist processes using CEq Zhou, H., Wang, C.-Y., Zuo, A., Pratt, J.P. SPIE-The International Society for Optical Engineering
5 Conference Proceedings CD changes of 193-nm resists during SEM measurement Kudo,T., Bae,J.-B., Dammel,R.R., Kim,W.-K., McKenzie,D.S., Rahman,M.D., Padmanaban,M., Ng,W. SPIE-The International Society for Optical Engineering	11 Conference Proceedings Quantification of CD-SEM wafer global charging effect on CD and CD uniformity of 193-nm lithography Ke, C.-M., Hung, H.-L., Chang, A., Chen, J.-H., Gau, T.-S., Ku, Y.-C., Lin, B.J., Otaka, T., Ueda, K., Kawada, H., … SPIE - The International Society of Optical Engineering
6 Conference Proceedings E-beam curing effects on the etch and CD-SEM stability of 193-nm resists Padmanaban, M., Alemy, E., Dammel, R.R., Kim, W.-K., Kudo, T., Lee, S.-H., McKenzie, D.S., Orsi, A., Rahman, D., Chen, … SPIE-The International Society for Optical Engineering	12 Conference Proceedings Lithographic characteristics of 193-nm resists imaged at 193 and 248 nm Opitz,J., Allen,R.D., Wallow,T.I., Wallraff,G.M., Hofer,D.C. SPIE-The International Society for Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12