Phase-shift mask in EUV lithography

Phase-shift mask in EUV lithography

Author(s):

Sugawara, M. ( Association of Super-Advanced Electronics Technologies (Japan) )
Chiba, A. ( Association of Super-Advanced Electronics Technologies (Japan) )
Nishiyama, I. ( Association of Super-Advanced Electronics Technologies (Japan) )

Publication title:

Emerging Lithographic Technologies VII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5037

Pub. Year:

2003

Vol.:

2

Pt.:

Poster Session

Page(from):

850

Page(to):

859

Pages:

10

Pub. info.:

Bellingham, WA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448422 [0819448427]

Language:

English

Call no.:

P63600/5037

Type:

Conference Proceedings

Details

TDL ID:	ZA00013023
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Emerging Lithographic Technologies
Conf. info. (Number):	2003 : 7th
Conf. info. (Venue):	Santa Clara, California, USA
Conf. info. (Date):	2003.02.25-2003.02.27
Note for article:	Poster Session ; 5037-104

Similar Items:

1 Conference Proceedings Estimation-EUV mask flatness for allowable pattern shift Chiba, A., Sugawara, M., Nishiyama, I. SPIE-The International Society for Optical Engineering	7 Conference Proceedings Simulation analysis of printability of scratch and bump defects in EUV lithography [6151-32] Sugawara, M., Nishiyama, I. SPIE - The International Society of Optical Engineering
2 Conference Proceedings Simulation study of pattern printability for reflective mask in EUV lithography Sugawara, M., Chiba, A., Nishiyama, I. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Impact of slanted absorber side wall on printability in EUV lithography [5992-131] Sugawara, M., Nishiyama, I. SPIE - The International Society of Optical Engineering
3 Conference Proceedings Dependence of pattern printability on thicknesses of absorber and cap layers of Mo/Si mask blank for EUV lithography Sugawara, M., Chiba, A., Yamanashi, H., Nishiyama, I. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Assessment of pattern position shift for defocusing in EUV lithography M. Sugawara SPIE - The International Society of Optical Engineering
4 Conference Proceedings Mask pattern correction to compensate for the effect of off-axis incidence in EUV lithography [6283-96] Sugawara, M., Nishiyama, I. SPIE - The International Society of Optical Engineering	10 Conference Proceedings Phase-shift mask for EUV lithography [6151-69] Constancias, C., Richard, M., Joyeux, D., Chiaroni, J., Blanc, R., Robic, J. Y., Quesnel, E., Muffato, V. SPIE - The International Society of Optical Engineering
5 Conference Proceedings Effect of absorber material and mask pattern correction on pattern fidelity in EUV lithography Sugawara, M., Hashimoto, T., Nishiyama, I. SPIE - The International Society of Optical Engineering	11 Conference Proceedings Pattern printability for off-axis incident light in EUV lithography Sugawara, M., Ito, M., Ogawa, T., Hoshino, E., Chiba, A., Okazaki, S. SPIE-The International Society for Optical Engineering
6 Conference Proceedings Pattern printability for reflectance degradation of Mo/Si mask blanks in EUV lithography Sugawara, M., Ito, M., Chiba, A., Hoshino, E., Yamanashi, H., Hoko, H., Ogawa, T., Lee, B. T., Yoneda, T., Takahashi, … SPIE-The International Society for Optical Engineering	12 Conference Proceedings Study of alternating phase shift mask structures for ArF lithography Kojima, Y., Konishi, T., Sasaki, J., Tanaka, K., Komizo, T., Morita, M., Shirasaki, M., Ohshima, T., Takahashi, H., … SPIE - The International Society of Optical Engineering

1

2

3

4

5

6

7

8

9

10

11

12