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The origin of the 1/f noise in GaN-based HFETs: Is it tunneling?

Author(s):
Levinshtein, M.E. ( A.F. Ioffe Physico-Technical Institute (Russia) )  
Publication title:
10th International Symposium on Nanostructures: Physics and Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5023
Pub. Year:
2003
Page(from):
320
Page(to):
322
Pages:
3
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
Language:
English
Call no.:
P63600/5023
Type:
Conference Proceedings

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