Raman studies as a tool for characterization of the strained hexagonal GaN/AlxGa1-xN superlattices
- Author(s):
Davydov, V.Yu. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Smirnov, A.N. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Goncharuk, I.N. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Kyutt, R.N. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Scheglov, M.P. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Baidakova, M.V. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Lundin, W.V. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Zavarin, E.E. ( A.F. Ioffe Physico-Technical Institute (Russia) ) Smirnov, M.B. ( St. Petersburg State Univ. (Russia) ) Karpov, S.V. ( St. Petersburg State Univ. (Russia) ) Harima, H. ( Kyoto Institute of Technology (Japan) ) - Publication title:
- 10th International Symposium on Nanostructures: Physics and Technology
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 5023
- Pub. Year:
- 2003
- Page(from):
- 146
- Page(to):
- 149
- Pages:
- 4
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819448248 [0819448249]
- Language:
- English
- Call no.:
- P63600/5023
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
7
Conference Proceedings
The Influence of GaN Buffer Layer Stoichiometry on Properties of GaN Epilayer
Electrochemical Society |
Trans Tech Publications |
Elsevier |
3
Conference Proceedings
Electron Traps in Undoped GaN Layers Subjected to Gamma-Irradiation and Annealing
Trans Tech Publications |
9
Conference Proceedings
The Growth Features of III-N Layers Grown on Sapphire Substrates and Their Optical and Electronic Properties
Electrochemical Society |
Trans Tech Publications |
10
Conference Proceedings
Some Features of a Nucleation Layer Growth Process and its Influence on the CaN Epilayer Quality
Trans Tech Publications |
SPIE-The International Society for Optical Engineering |
Springer |
6
Conference Proceedings
Impact of radiation-induced defects on the yellow luminescence in MOCVD GaN
Trans Tech Publications |
Chemical Society |