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Improvement of conductivity and breakdown characteristics of AlGaN/GaN HEMT structures in passivation experiments

Author(s):
Shapoval, S. ( Institute of Microelectronics Technology (Russia) )
Gurtovoi, V. ( Institute of Microelectronics Technology (Russia) )
Kovalchuk, A. ( Institute of Microelectronics Technology (Russia) )
Eastman, L.F. ( Cornell Univ. (USA) )
Vertjachih, A. ( Cornell Univ. (USA) )
Gaquiere, C. ( Institut d'Electronique et de Microelectronique du Nord-CNRS (France) )
Theron, D. ( Institut d'Electronique et de Microelectronique du Nord-CNRS (France) )
2 more
Publication title:
10th International Symposium on Nanostructures: Physics and Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5023
Pub. Year:
2003
Page(from):
90
Page(to):
93
Pages:
4
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
Language:
English
Call no.:
P63600/5023
Type:
Conference Proceedings

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