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Influence of high excitation on excitonic states in GaN/AlGaN quantum wells

Author(s):
Nelson, D.K. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Jacobson, M.A. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Grandjean, N. ( Ctr. de Recherche sur I'Hetero-Epitaxie et ses Applications-CNRS (France) )
Massies, J. ( Ctr. de Recherche sur I'Hetero-Epitaxie et ses Applications-CNRS (France) )
Bigenwald, P. ( Univ. Blaise Pascal Clermont II-CNRS (France) )
Kavokin, A.V. ( Univ. Blaise Pascal Clermont II-CNRS (Russia) )
1 more
Publication title:
10th International Symposium on Nanostructures: Physics and Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5023
Pub. date:
2003
Page(from):
86
Page(to):
89
Pages:
4
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
Language:
English
Call no.:
P63600/5023
Type:
Conference Proceedings

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