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The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

Author(s):
Kryzhanovskaya, N.V. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Gladyshev, A.G. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Sizov, D.S. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Kovsh, A.R. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Tsatsul'nikov, A.F. ( A.F. Ioffe Physico-Technical Institute (Russia) )
Chi, J.Y. ( Industrial Technology Research Institute (Taiwan) )
Wang, J.S. ( Industrial Technology Research Institute (Taiwan) )
Wei, L. ( Industrial Technology Research Institute (Taiwan) )
Ustinov, V.M. ( A.F. Ioffe Physico-Technical Institute (Russia) )
4 more
Publication title:
10th International Symposium on Nanostructures: Physics and Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
5023
Pub. date:
2003
Page(from):
38
Page(to):
41
Pages:
4
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819448248 [0819448249]
Language:
English
Call no.:
P63600/5023
Type:
Conference Proceedings

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