The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

The carriers localization influence on the optical properties of GaAsN/GaAs heterostructures grown by molecular-beam epitaxy

Author(s):

Kryzhanovskaya, N.V. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Gladyshev, A.G. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Sizov, D.S. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Kovsh, A.R. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Tsatsul'nikov, A.F. ( A.F. Ioffe Physico-Technical Institute (Russia) )

Chi, J.Y. ( Industrial Technology Research Institute (Taiwan) )

Wang, J.S. ( Industrial Technology Research Institute (Taiwan) )

Wei, L. ( Industrial Technology Research Institute (Taiwan) )

Ustinov, V.M. ( A.F. Ioffe Physico-Technical Institute (Russia) )

4 more

Publication title:

10th International Symposium on Nanostructures: Physics and Technology

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5023

Pub. Year:

2003

Page(from):

38

Page(to):

41

Pages:

4

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448248 [0819448249]

Language:

English

Call no.:

P63600/5023

Type:

Conference Proceedings

Details

TDL ID:	ZA00013007
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on Nanostructures: Physics and Technology
Conf. info. (Number):	2002 : 10th
Conf. info. (Venue):	St. Petersburg, Russia
Conf. info. (Date):	2002.06.17-2002.06.21

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