High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing

High-performance polycrystalline silicon TFTs fabricated by high-temperature process with excimer laser annealing

Author(s):

Jiroku, H. ( Seiko Epson Corp. (Japan) )
Miyasaka, M. ( Seiko Epson Corp. (Japan) )
Inoue, S. ( Seiko Epson Corp. (Japan) )
Tsunekawa, Y. ( Seiko Epson Corp. (Japan) )
Shimoda, T. ( Seiko Epson Corp. (Japan) )

Publication title:

Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

5004

Pub. Year:

2003

Page(from):

28

Page(to):

35

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819448040 [0819448044]

Language:

English

Call no.:

P63600/5004

Type:

Conference Proceedings

Details

TDL ID:	ZA00012987
Series ID:	PA00000029
Conf. info. (Name):	IS&T/SPIE Electronic Imaging : Poly-Silicon Thin Film Transistor Technology and Applications in Displays and Other Novel Technology Areas
Conf. info. (Number):	2003
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2003.01.21-2003.01.22

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