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Properties of InGaN/AlInGaN/AlGaN quantum-well UV light-emitting diodes

Author(s):
Lee, J. ( CHTM/Univ. of New Mexico (USA) )
Eliseev, P.G. ( CHTM/Univ. of New Mexico (USA) )
Osinski, M. ( CHTM/Univ. of New Mexico (USA) )
Lee, D.-S. ( EMCORE Corp. (USA) )
Florescu, D.I. ( EMCORE Corp. (USA) )
Guo, S. ( EMCORE Corp. (USA) )
Pophristic, M. ( EMCORE Corp. (USA) )
2 more
Publication title:
Physics and Simulation of Optoelectronic Devices XI
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4986
Pub. Year:
2003
Page(from):
595
Page(to):
607
Pages:
13
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819447869 [0819447862]
Language:
English
Call no.:
P63600/4986
Type:
Conference Proceedings

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