Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

Fixed wavelength selection for the far-infrared p-Ge laser using thin silicon intracavity etalon

Author(s):

Bosq, T.W.D. ( Univ. of Central Florida (USA) )
Peale, R.E. ( Univ. of Central Florida (USA) )
Nelson, E.W. ( Univ. of Central Florida (USA) )
Muravjov, A.V. ( Univ. of Central Florida (USA) )
Fredricksen, C.J. ( Zaubertek, Inc. (USA) )

Publication title:

Solid State Lasers XII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4968

Pub. Year:

2003

Page(from):

18

Page(to):

23

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819447685 [0819447684]

Language:

English

Call no.:

P63600/4968

Type:

Conference Proceedings

Details

TDL ID:	ZA00012952
Series ID:	PA00000029
Conf. info. (Name):	SPIE LASE : Solid State Lasers
Conf. info. (Number):	2003 : 12th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2003.01.28, 2003.01.30

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