Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C

Optimization of InGaAsP/InP buried heterostructure DFB lasers for 10-Gbit/s operation up to 100°C

Author(s):

Charles, P.M. ( Agilent Technologies (United Kingdom) )

Agresti, M. ( Agilent Technologies (Italy) )

Burns, G. ( Agilent Technologies (United Kingdom) )

Berry, G.M. ( Agilent Technologies (United Kingdom) )

Bertone, D. ( Agilent Technologies (Italy) )

Davies, A. ( Agilent Technologies (United Kingdom) )

Fang, R.Y. ( Agilent Technologies (Italy) )

Gotta, P. ( Agilent Technologies (Italy) )

Kompocholis, C. ( Agilent Technologies (United Kingdom) )

Magnetti, G. ( Agilent Technologies (Italy) )

Massa, J. ( Agilent Technologies (United Kingdom) )

Meneghini, G. ( Agilent Technologies (Italy) )

Paoletti, R. ( Agilent Technologies (Italy) )

Rossi, G. ( Agilent Technologies (Italy) )

Taylor, A. ( Agilent Technologies (United Kingdom) )

Valenti, P. ( Agilent Technologies (Italy) )

Meliga, M. ( Agilent Technologies (Italy) )

12 more

Publication title:

Laser Diodes, Optoelectronic Devices, and Heterogenous Integration

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4947

Pub. Year:

2003

Page(from):

154

Page(to):

163

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819447425 [0819447420]

Language:

English

Call no.:

P63600/4947

Type:

Conference Proceedings

Details

TDL ID:	ZA00012931
Series ID:	PA00000029
Conf. info. (Name):	Photonics Fabrication Europe : Laser Diodes, Optoelectronic Devices, and Heterogenous Integration
Conf. info. (Number):	2002
Conf. info. (Venue):	Brugge, Belgium
Conf. info. (Date):	2002.10.29-2002.10.31

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