Influence of Shannon Implant on GaAs- MESFETs Leakage Currents

Influence of Shannon Implant on GaAs- MESFETs Leakage Currents

Author(s):

Publication title:

Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4746

Pub. date:

2002

Vol.:

VOL-2

Page(from):

882

Page(to):

886

Pages:

5

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445001 [0819445002]

Language:

English

Call no.:

P63600/4746

Type:

Conference Proceedings

Details

TDL ID:	ZA00012784
Series ID:	PA00000029
Conf. info. (Name):	International Workshop on the Physics of Semiconductor Devices
Conf. info. (Number):	2001 : 11th
Conf. info. (Venue):	Delhi, India
Conf. info. (Date):	2001.12.11-2001.12.15

Similar Items:

1 Conference Proceedings Influence of Gate Barrier Height Tailoring on p-Channel GaAs-MESFET Threshold Voltage Kumar,Yogendra, Tandon,V.K., Sarkar,S. SPIE - The International Society for Optical Engineering	7 Conference Proceedings Effect of Gate Profile on the Characteristics of 0.5μm GaAs MESFETs Naik, A.A., Rawal, D.S., Prabhakar, S., Sai Saravanan, G., Sehgal, B.K., Gulati, R., Vyas, H.P., Kumar, Rajesh, … SPIE-The International Society for Optical Engineering
2 Conference Proceedings USE OF Pt GATE METALLIZATION TO REDUCE GATE LEAKAGE CURRENT IN GaAs MESFETs Ren, F., Emerson, A. B., Pearton, S. J., Hobson, W. S., Fullowan, T. R., Lothian, J. Materials Research Society	8 Conference Proceedings Gamma Radiation Induced Effects in GaAs MESFETs Manchanda, R., Nayyar, N.K., Balakrishnan, V.R., Muralidharan, R., Vyas, H.P., Kumar, V. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Effect of Gamma Radiation on GaAs Mesfets Manchanda,R., Nayyar,N.K., Balakrishnan,V.R., Kumar,V. SPIE - The International Society for Optical Engineering	9 Conference Proceedings Ion Implanted GaAs MESFET Characteristics for Different Dopants and Implanted Energy Singh,Jai Shankar, Khan,R.U., Pal,B.B., Chattopadhyay,S.N. SPIE-The International Society for Optical Engineering, Narosa
4 Conference Proceedings Characterisation of Ion Implanted Layers in GaAs and Influence of Various Parameters on Device Performance Bhattacharya,B., Sai Saravanan,G., Khatri,R.K., Naik,A.A., Rawal,D.S., Sharma,H.S., Sehgal,B.K., Gulati,R., Vyas,H.P., … Narosa Publishing House	10 Conference Proceedings INCOHERENT LIGHT ANNEALING OF SELECTIVELY IMPLANTED GaAs FOR MESFET APPLICATIONS Kitching, S. A., Badawi, M. H., Bland, S. W., Mun, J. Materials Research Society
5 Conference Proceedings Selective Area n+ Implanted MESFET Process for the Fabrication of MMICs Sehgal, B.K., Naik, A.A,, Gulati, R., Vyas, H.P., Kumar, K.C., Subraveti, Vijay, Rao, A.V.S.K., Mohan, P., … SPIE-The International Society for Optical Engineering	11 Conference Proceedings New Threshold Voltage Model for an Ion Implanted GaAs MESFET Sharma,Yagya Deva, Haldar,S., Thomas,Ciby, Gupta,R.S. SPIE-The International Society for Optical Engineering, Narosa
6 Conference Proceedings Anomalous Leakage Current Reduction by Ramping Rate Control in MeV Implantation Hamada, K., Nishio, N., Saito, S. MRS - Materials Research Society	12 Conference Proceedings DRAIN CURRENT DLTS SPECTRA AND GaAs SUBSTRATE CRYSTAL EFFECT ON LOW-FREQUENCY-OSCILLATIONS ON Si-IMPLANTED MESFET'S Saito, Yasuyuki, Suga, Tohru, Inoue, Kazuhiko, Mitani, Tatsuro, Tomizawa, Yukata, Nishio, Johji, Terashima, Kazutaka, … Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12