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Light-current characteristics of 1.55-μm InGaAsP/InP MQW-LD with highly d-doped InGaAsP/InP layer

Author(s):
Publication title:
Materials and devices for optical and wireless communications : APOC 2002 : Asia-Pacific Optical and Wireless Communications : 15-18 October, 2002, Shanghai, China
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4905
Pub. Year:
2002
Page(from):
527
Page(to):
532
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819446947 [0819446947]
Language:
English
Call no.:
P63600/4905
Type:
Conference Proceedings

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