Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)

Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)

Author(s):

Eliseev, P.G. ( CHTM/Univ. of New Mexico (USA) )

Ionin, A.A. ( P.N. Lebedev Physical Institute (Russia) )

Klimachev, Y.M.

Sinitsyn, D.V.

Lee, J. ( CHTM/Univ. of New Mexico (USA) )

Osinski, M.

1 more

Publication title:

High-Power Laser Ablation IV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4760

Pub. Year:

2002

Vol.:

Part One

Page(from):

143

Page(to):

155

Pages:

13

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445247 [081944524X]

Language:

English

Call no.:

P63600/4760

Type:

Conference Proceedings

Details

TDL ID:	ZA00012597
Series ID:	PA00000029
Conf. info. (Name):	International Symposium on High-Power Laser Ablation
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Taos, NM, USA
Conf. info. (Date):	2002.04.22-2002.04.26

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