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Application of high-power laser technology to wide-bandgap nitride semiconductor processing (Invited Paper)

Author(s):
Eliseev, P.G. ( CHTM/Univ. of New Mexico (USA) )
Ionin, A.A. ( P.N. Lebedev Physical Institute (Russia) )
Klimachev, Y.M.
Sinitsyn, D.V.
Lee, J. ( CHTM/Univ. of New Mexico (USA) )
Osinski, M.
1 more
Publication title:
High-Power Laser Ablation IV
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4760
Pub. date:
2002
Vol.:
Part One
Page(from):
143
Page(to):
155
Pages:
13
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819445247 [081944524X]
Language:
English
Call no.:
P63600/4760
Type:
Conference Proceedings

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