Use of nanomachining for subtractive repair of EUV and other challenging mask defects

Use of nanomachining for subtractive repair of EUV and other challenging mask defects

Author(s):

Brinkley, D. ( Intel Corp. (USA) )
White, R. ( RAVE LLC (USA) )
Bozak, R.
Liang, T. ( Intel Corp. (USA) )
Liu, G.

Publication title:

Photomask and Next-Generation Lithography Mask Technology IX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4754

Pub. Year:

2002

Page(from):

900

Page(to):

911

Pages:

12

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819445179 [0819445177]

Language:

English

Call no.:

P63600/4754

Type:

Conference Proceedings

Details

TDL ID:	ZA00012591
Series ID:	PA00000029
Conf. info. (Name):	Photomask and next-generation lithography mask technology
Conf. info. (Number):	2002 : 9th
Conf. info. (Venue):	Yokohama, Japan
Conf. info. (Date):	2002.04.23-2002.04.25

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