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Atomic Scale Defects Involved in Stress Induced Leakage Currents in Very Thin Oxides on Silicon

Author(s):
Publication title:
Proceedings of the Eleventh International Workshop on the Physics of Semiconductor Devices : (December 11-15, 2001)
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4746
Pub. date:
2002
Vol.:
VOL-1
Page(from):
608
Page(to):
615
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819445001 [0819445002]
Language:
English
Call no.:
P63600/4746
Type:
Conference Proceedings

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