Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.

Characterization and improvement of resist pattern collapse on ArF (193 nm) organic B.A.R.C.

Author(s):

Hwang, Y.-S. ( Hynix Semiconductor, Inc. (Korea) )

Ding, S.-J. ( Clariant Corp. (USA) )

Xiang, Z.

Neisser, M.

5 more

Publication title:

Advances in Resist Technology and Processing XIX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4690

Pub. Year:

2002

Vol.:

Part Two

Page(from):

1119

Page(to):

1125

Pages:

7

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444363 [0819444367]

Language:

English

Call no.:

P63600/4690

Type:

Conference Proceedings

Details

TDL ID:	ZA00012524
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2002 : 19th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2002.03.04-2002.03.06

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