Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset, and wafer thermal history

Calibration of ESCAP resist simulation parameters from consideration of printed CD pitch bias, CD measurement offset, and wafer thermal history

Author(s):

Robertson, S.A. ( Shipley Co. LLC (USA) )

Kang, D.

Tye, S.D.

Hansen, S.G. ( ASML (USA) )

Fumar-Pici, A.

Chiou, T.-B. ( ASML (Taiwan) )

Byers, J.D. ( KLA-Tencor Corp. (USA) )

Mack, C.A.

Smith, M.D.

4 more

Publication title:

Advances in Resist Technology and Processing XIX

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4690

Pub. Year:

2002

Vol.:

Part Two

Page(from):

952

Page(to):

962

Pages:

11

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819444363 [0819444367]

Language:

English

Call no.:

P63600/4690

Type:

Conference Proceedings

Details

TDL ID:	ZA00012524
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2002 : 19th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2002.03.04-2002.03.06

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