Portable optoelectronic gas sensors operating in the mid-IR spectral range (λ=3÷5 μm)
- Author(s):
Aleksandrov, S. ( A.F. loffe Physical-Technical Institute (Russia) ) Gavrilov, G.A. Kapralov, A.A. Karandashov, S.A. Matveev, B.A. Sotnikova, G. Stus', N.M. - Publication title:
- Second International Conference on Lasers for Measurement and Information Transfer
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4680
- Pub. Year:
- 2002
- Page(from):
- 188
- Page(to):
- 194
- Pages:
- 7
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819444196 [0819444197]
- Language:
- English
- Call no.:
- P63600/4680
- Type:
- Conference Proceedings
Similar Items:
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
2
Conference Proceedings
Characterization of pyroelectric materials for uncooled infrared sensors in dielectric bolometer mode: specific features and setup
SPIE - The International Society of Optical Engineering |
8
Conference Proceedings
Si-Te acousto-optic modulator for fiber optic gas sensor based on midwave InGaAsSb/InAsSbP diode laser
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
9
Conference Proceedings
InAs and InAs(Sb)(P) (3-5 μm) immersion lens photodiodes for portable optic sensors
SPIE - The International Society of Optical Engineering |
4
Conference Proceedings
Midwave (3-5 µm) III-V infrared IEDs and diode lasers as a source for gas sensors
Society of Photo-optical Instrumentation Engineers |
SPIE-The International Society for Optical Engineering |
SPIE-The International Society for Optical Engineering |
11
Conference Proceedings
4-μm negative luminescence from p-InAsSbP/n-InAs diodes in the temperature range of 20 to 180゜C
SPIE-The International Society for Optical Engineering |
6
Conference Proceedings
LPE GROWTH AND CHARACTERIZATION OF InAsSbP/In1-xGaxAs1-ySb /InAsSbP (x-0, y -O) HETEROSTRUCTURES FOR LONG WAVELENGTH (λ>3μm) LEDS AND LASERS
Materials Research Society |
12
Conference Proceedings
Parameters of optoelectronic devices based on semiconductor light-emitting and light-sensitive diodes under thermostabilization conditions
SPIE - The International Society for Optical Engineering |