Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 μm
- Author(s):
Jouhti, T. ( Tampere Univ. of Technology (Finland) ) Peng, C.S. Pavelescu, E.-M. Li, W. Rangel-Kuoppa, V.-T. Konttinen, J. Laukkanen, P. Pessa, M. - Publication title:
- Novel In-Plane Semiconductor Lasers
- Title of ser.:
- Proceedings of SPIE - the International Society for Optical Engineering
- Ser. no.:
- 4651
- Pub. Year:
- 2002
- Page(from):
- 32
- Page(to):
- 41
- Pages:
- 10
- Pub. info.:
- Bellingham, Wash.: SPIE-The International Society for Optical Engineering
- ISSN:
- 0277786X
- ISBN:
- 9780819443908 [0819443905]
- Language:
- English
- Call no.:
- P63600/4651
- Type:
- Conference Proceedings
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