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Group III-arsenide-nitride quantum well structures on GaAs for laser diodes emitting at 1.3 μｍ

Author(s):
Jouhti, T. ( Tampere Univ. of Technology (Finland) )
Peng, C.S.
Pavelescu, E.-M.
Li, W.
Rangel-Kuoppa, V.-T.
Konttinen, J.
Laukkanen, P.
Pessa, M.
3 more
Publication title:
Novel In-Plane Semiconductor Lasers
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4651
Pub. Year:
2002
Page(from):
32
Page(to):
41
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443908 [0819443905]
Language:
English
Call no.:
P63600/4651
Type:
Conference Proceedings

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