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Gain characteristics of GaInP quantum well laser structures (Invited Paper)

Author(s):
Publication title:
Novel In-Plane Semiconductor Lasers
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4651
Pub. Year:
2002
Page(from):
1
Page(to):
10
Pages:
10
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443908 [0819443905]
Language:
English
Call no.:
P63600/4651
Type:
Conference Proceedings

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