InAs/InGaSb Type-II strained layer superlattice IR detectors

InAs/InGaSb Type-II strained layer superlattice IR detectors

Author(s):

Nathan, V. ( Air force Research Lab. (USA) )
Aanselm, A. ( Applied Optoelectonics, Inc. (USA) )
Lin, C.H.
Johnson, J.

Publication title:

Photodetector materials and devices VII : 21-23 January 2002, San Jose, USA

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4650

Pub. Year:

2002

Page(from):

185

Page(to):

198

Pages:

14

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443892 [0819443891]

Language:

English

Call no.:

P63600/4650

Type:

Conference Proceedings

Details

TDL ID:	ZA00012478
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Photodetector materials and devices
Conf. info. (Number):	2002 : 7th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2002.01.21-2002.01.23

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