Carrier capture times in 1.3-μm materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers

Carrier capture times in 1.3-μm materials: GaInNAs, InGaAsP, and InGaAlAs semiconductor quantum well lasers

Author(s):

Hader, J. ( Univ. of Arizona(USA) )
Moloney, J.V.
Koch, S.W. ( Philipps-Univ. Marburg(Germany) )

Publication title:

Physics and Simulation of Optoelectronic Devices X

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4646

Pub. Year:

2002

Page(from):

287

Page(to):

292

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443854 [0819443859]

Language:

English

Call no.:

P63600/4646

Type:

Conference Proceedings

Details

TDL ID:	ZA00012474
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : Physics and Simulation of Optoelectronic Devices
Conf. info. (Number):	2002 : 10th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2002.01.21-2002.01.25

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