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Determination of subband energy levels from self-excited Raman scattering in compressively strained InGaAs/GaAs quantum well lasers

Author(s):
Publication title:
Physics and Simulation of Optoelectronic Devices X
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4646
Pub. date:
2002
Page(from):
279
Page(to):
286
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819443854 [0819443859]
Language:
English
Call no.:
P63600/4646
Type:
Conference Proceedings

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