Selective intermixing of Ga(In)Nas/GaAs quantum well strctures using SiO2 encapsulation and rapid thermal annealing

Selective intermixing of Ga(In)Nas/GaAs quantum well strctures using SiO2 encapsulation and rapid thermal annealing

Author(s):

Xu, Y. ( Institute of Semiconductors (China) )
Li, L.
Pan, Z.
Lin, Y.W.
Wang, Q.

Publication title:

APOC 2001: Asia-Pacific Optical and Wireless Communications : Optoelectronics, Materials, and Dvices for Communications : 13-15 November 2001, Beijing, Chaina

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4580

Pub. Year:

2001

Page(from):

159

Page(to):

166

Pages:

8

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819443106 [0819443107]

Language:

English

Call no.:

P63600/4580

Type:

Conference Proceedings

Details

TDL ID:	ZA00012408
Series ID:	PA00000029
Conf. info. (Name):	APOC : Asia Communications and Photonics
Conf. info. (Number):	2001
Conf. info. (Venue):	Beijing, China
Conf. info. (Date):	2001.11.13-2001.11.15

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