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Visible photoluminescence from Ge+-ion-implanted SiSxNy annealed under hydrostatic pressure

Author(s):
Tyschenko,I.E. ( Institute of Semiconductor Physics )
Zhuravlev,K.S.
Vandyshev,E.N.
Misiuk,A.
Yankov,R.A.
Rebohle,L.
Skorupa,W.
2 more
Publication title:
International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4413
Pub. Year:
2000
Page(from):
237
Page(to):
241
Pages:
5
Pub. info.:
Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819441164 [0819441163]
Language:
English
Call no.:
P63600/4413
Type:
Conference Proceedings

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