Optical properties of GaN layers grown by MOCVD

Optical properties of GaN layers grown by MOCVD

Author(s):

Kudrawiec,R. ( Wroclaw Univ. of Technology )

Publication title:

International Conference on Solid State Crystals 2000 : Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, 9-13 October, 2000, Zakopane, Poland

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4413

Pub. Year:

2000

Page(from):

37

Page(to):

40

Pages:

4

Pub. info.:

Bellingham, Wash., USA: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441164 [0819441163]

Language:

English

Call no.:

P63600/4413

Type:

Conference Proceedings

Details

TDL ID:	ZA00012128
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	2000
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	2000.10.09-2000.10.13

Similar Items:

1 Conference Proceedings Optical studies of MOVPE-grown GaN Layers Ciorga,M., Jezierski,K., Bryja,L., Misiewicz,J., Paszkiewicz,R., Korbutowicz,R., Panek,M., Paszkiewicz,B., … SPIE - The International Society for Optical Engineering	7 Conference Proceedings LBIC investigation of the dynamic behavior of trapping-recombination centers Paszkiewicz,B., Romanowski,A., Paszkiewicz,R., Panek,M., Tlaczala,M.J., Andrzejewski,P. SPIE-The International Society for Optical Engineering
2 Conference Proceedings Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution Ciorga,M., Bryja,L., Misiewicz,J., Paszkiewicz,R., Panek,M., Paszkiewicz,B., Tlaczala,M. J. SPIE-The International Society for Optical Engineering	8 Conference Proceedings Photoreflectance investigation of δ-doped MOVPE-grown AlxGa1-xAs layers Nowaczyk-Utko,M., Sek,G., Misiewicz,J., Sciana,B., Radziewicz,D., Tlaczala,M.J. SPIE-The International Society for Optical Engineering
3 Conference Proceedings Photoreflectance and photoluminescence of InGaAs/GaAs structures Misiewicz,J., Ciorga,M., Sek,G., Bryja,L., Radziewicz,D., Korbutowicz,R., Panek,M., Tlaczala,M. J. SPIE-The International Society for Optical Engineering	9 Conference Proceedings Nonlinear optical characterization of GaN layers grown by MOCVD on sapphire Tiginyanu, I. M., Kravetsky, I. V., Pavlidis, D., Eisenbach, A., Hildebrandt, R., Marowsky, G., Hartnagel, H. L. MRS-Materials Research Society
4 Conference Proceedings Application of GaN laterally overgrown on sapphire Paszkiewicz,R., Korbutowicz,R., Paszkiewicz,B., Radziewicz,D., Kozlowski,J., Tlaczala,M.J. SPIE-The International Society for Optical Engineering	10 Conference Proceedings Optical studies of amorphous and polycrystalline Zn3P2 Bryja,L., Ciorga,M., Jezierski,K., Bohdziewicz,A., Misiewicz,J. SPIE - The International Society for Optical Engineering
5 Conference Proceedings Growth of high-quality GaN and Al.Ga1.N Layers by an MOVPE technique Paszkiewicz,R., Korbutowicz,R., Radziewicz,D., Panek,M., Paszkiewicz,B., Koztowski,J., Boratyrtski,B., Ttaczata,M.J. SPIE - The International Society for Optical Engineering	11 Conference Proceedings Structural and Optical Properties of AlGaN/GaN Quantum-Well Structures Grown by MOCVD on Sapphire Niebuhr, R., Bachem, K. H., Behr, D., Hoffmann, C., Kaufmann, U., Lu, Y., Santic, B., Wagner, J., Arlery, M., Rouviere, … MRS - Materials Research Society
6 Conference Proceedings Observation of the new lines in photoluminescence from MOCVD-grown GaAs Ciorga,M., Misiewicz,J., Tlaczala,M. J., Panek,M., Veje,E. SPIE-The International Society for Optical Engineering	12 Conference Proceedings Investigation of The Surface Polarity, Defects, Electrical And Optical Properties of GaN Grown by MBE, MOCVD, And HVPE * Visconti, P., Jones, K.M., Reshchikov, M.A., Yun, F., Morkoc, H., Molnar, R.J., Passaseo, A., Cingolani, R., Park, S.S., … Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12