Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Effect of stress on defect transformation in hydrogen-implanted silicon and SOI structures

Author(s):

Antonova,J.V. ( Institute of Semiconductor Physics )

Publication title:

International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4412

Pub. Year:

2000

Page(from):

120

Page(to):

125

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819441157 [0819441155]

Language:

English

Call no.:

P63600/4412

Type:

Conference Proceedings

Details

TDL ID:	ZA00012127
Series ID:	PA00000029
Conf. info. (Name):	International Conference on Solid State Crystals
Conf. info. (Number):	2000 : 2nd
Conf. info. (Venue):	Zakopane, Poland
Conf. info. (Date):	2000.10.09-2000.10.13

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