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Impact of ArF attenuated PSM using multishifter layer (TiN/Si3N4) for next-generation lithography

Author(s):
Nam,K.-H. ( DuPont Photomasks Korea Ltd. )
Kim,L.-J.
Jeong,H.-S.
Lee,S.-W.
Lee,I.-S.
Shin,C.
Kim,H.-S.
Dieu,L.
Paek,S.W.
Koo,S.-S.
Bae,S.-M.
Ham,Y.-M.
Shin,K.-S.
8 more
Publication title:
Photomask and Next-Generation Lithography Mask Technology VIII
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4409
Pub. Year:
2001
Page(from):
70
Page(to):
80
Pages:
11
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819441119 [0819441112]
Language:
English
Call no.:
P63600/4409
Type:
Conference Proceedings

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