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Mechanism and annihilation of shallow-trench-isolation-enhanced poly-mask-edge N+/P-well junction leakage

Author(s):
Doong,K.Y.-Y. ( Taiwan Semiconductor Manufacturing Co., Ltd. )
Lin,S.
Hsieh,S.
Shen,B.
Yang,Y.-H.
Chen,P.
Hsu,C.C.-H.
2 more
Publication title:
In-line characterization, yield, reliability, and failure analysis in microelectronic manufacturing II : 31 May-1 June 2001, Edinburgh, UK
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4406
Pub. Year:
2001
Page(from):
49
Page(to):
56
Pages:
8
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819441072 [0819441074]
Language:
English
Call no.:
P63600/4406
Type:
Conference Proceedings

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