Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

Feasibility study on the ArF attenuated phase-shift mask for 100-nm node lithography

Author(s):

Koo,S.-S. ( Hyundai Electronics Industries Co., Ltd. )

Publication title:

Optical Microlithography XIV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4346

Pub. Year:

2001

Vol.:

4346

Pt.:

One of Two Parts

Page(from):

770

Page(to):

777

Pages:

8

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440327 [0819440329]

Language:

English

Call no.:

P63600/4346

Type:

Conference Proceedings

Details

TDL ID:	ZA00012062
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Optical microlithography
Conf. info. (Number):	2001 : 14th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2001.02.27-2001.03.02

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