Modification of development parameters of 193-nm chemically amplified resist with pattern density

Modification of development parameters of 193-nm chemically amplified resist with pattern density

Author(s):

Seo,E.-J. ( Hanyang Univ. )

Publication title:

Advances in Resist Technology and Processing XVIII

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4345

Pub. Year:

2001

Vol.:

4345

Pt.:

Two of Two Parts

Page(from):

963

Page(to):

972

Pages:

10

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440310 [0819440310]

Language:

English

Call no.:

P63600/4345

Type:

Conference Proceedings

Details

TDL ID:	ZA00012061
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Advances in resist technology and processing
Conf. info. (Number):	2001 : 18th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2001.02.26-2001.02.28

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