Secondary-electron image profiles using bias voltage technique in deep contact hole

Secondary-electron image profiles using bias voltage technique in deep contact hole

Author(s):

Ko,Y.-U. ( Univ. of Tennessee/Knoxville )
Joy,D.C.
Sullivan,N.T.
Mastovich,M.E.

Publication title:

Metrology, inspection, and process control for microlithography XV

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4344

Pub. Year:

2001

Page(from):

37

Page(to):

45

Pages:

9

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819440303 [0819440302]

Language:

English

Call no.:

P63600/4344

Type:

Conference Proceedings

Details

TDL ID:	ZA00012060
Series ID:	PA00000029
Conf. info. (Name):	SPIE Advanced Lithography : Metrology, inspection, and process control for microlithography
Conf. info. (Number):	2001 : 15th
Conf. info. (Venue):	Santa Clara, CA, USA
Conf. info. (Date):	2001.02.26-2001.03.01

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