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InGaAs/GaAsP/InGaP strain-compensated quantum well (λ＝1.17μm) diode lasers on GaAs

Author(s):
Publication title:
In-Plane Semiconductor Lasers V
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4287
Pub. Year:
2001
Page(from):
188
Page(to):
194
Pages:
7
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819439659 [0819439657]
Language:
English
Call no.:
P63600/4287
Type:
Conference Proceedings

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