MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

MOCVD-grown 1.3-μm InGaAsN multiple quantum well lasers incorporating GaAsP strain-compensation layers

Author(s):

Publication title:

In-Plane Semiconductor Lasers V

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4287

Pub. Year:

2001

Page(from):

170

Page(to):

175

Pages:

6

Pub. info.:

Bellingham, Wash.: SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9780819439659 [0819439657]

Language:

English

Call no.:

P63600/4287

Type:

Conference Proceedings

Details

TDL ID:	ZA00012003
Series ID:	PA00000029
Conf. info. (Name):	Photonics West - Optoelectronic Materials and Devices : In-plane semiconductor lasers
Conf. info. (Number):	2001 : 5th
Conf. info. (Venue):	San Jose, CA, USA
Conf. info. (Date):	2001.01.22-2001.01.23

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