Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

Lifetime and Leakage Current Studies in Shallow P-N Junctions Fabricated in a Deep High-Energy Boron Implanted P-Well

Author(s):

Poyai,A.

Publication title:

High Purity Silicon VI : proceedings of the sixth International Symposium

Title of ser.:

Proceedings of SPIE - the International Society for Optical Engineering

Ser. no.:

4218

Pub. Year:

2000

Page(from):

403

Page(to):

413

Pages:

11

Pub. info.:

Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering

ISSN:

0277786X

ISBN:

9781566772846 [1566772842]

Language:

English

Call no.:

P63600/4218

Type:

Conference Proceedings

Details

TDL ID:	ZA00011937
Series ID:	PA00000029
Conf. info. (Name):	Internationa Symposium on High Purity Silicon [ SPIE 0819438901 ] : Meeting of the Electrochemical Society
Conf. info. (Number):	6th : 198th
Conf. info. (Venue):	Phoenix, AZ, USA
Conf. info. (Date):	2000.10.22-2000.10.27

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