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Direct Proof of Argon Atoms Incorporated Into High-Purity Silicon Single Crystals During Growth in Argon Gas Ambient

Author(s):
Ulyashin,A.G.
Job,R.
Fahrner,W.R.
Mudryi,A.V.
Patuk,A.I.
Shakin,I.A.
1 more
Publication title:
High Purity Silicon VI : proceedings of the sixth International Symposium
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4218
Pub. Year:
2000
Page(from):
66
Page(to):
76
Pages:
11
Pub. info.:
Pennington, N.J. — Bellingham, Wash.: Electrochemical Society — SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9781566772846 [1566772842]
Language:
English
Call no.:
P63600/4218
Type:
Conference Proceedings

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