Blank Cover Image

Ecperimental study on the possibility of chemically amplified resists for mask production for device generations < 180 nm

Author(s):
Publication title:
20th Annual BACUS Symposium on Photomask Technology
Title of ser.:
Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:
4186
Pub. Year:
2000
Page(from):
108
Page(to):
113
Pages:
6
Pub. info.:
Bellingham, Wash.: SPIE-The International Society for Optical Engineering
ISSN:
0277786X
ISBN:
9780819438492 [0819438499]
Language:
English
Call no.:
P63600/4186
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings Application of e-beam chemically amplified resist to devices below 0.18-μm node

Jeon,C.-U., Kim,C.-H., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
7 Conference Proceedings Required mask specification for mass production devices below 65-nm design node [6349-81]

Nam, D., Choi, S., Doh, J., Noh, Y., Lee, H., Sin, Y., Kim, B., Kang, M., Han, W.

SPIE - The International Society of Optical Engineering
2 Conference Proceedings Extended capability of laser writer for masks beyond 180-nm nodes

Cho,S.-Y., Lee,J.-Y., Kim,C.-H., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
8 Conference Proceedings Comparative study on MEEF and dose latitude between attenuated PSM and Cr Binary masks

Cho,H.-J., Kim,Y.-H., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE - The International Society for Optical Engineering
3 Conference Proceedings Resolution improvement of chemical-amplification resist using process-induced effect correction

Choi,J.-H., Kim,C.-Y., Lee,J.-Y., Moon,S.-W., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
9 Conference Proceedings Dose latitude dependency on resist contrast in e-beam mask lithography

Cha,B.-C., Moon,S.-Y., Ki,W.-T., Yang,S.-H., Choi,S.-W., Han,W.-S., Yoon,H.-S., Sohn,J.-M.

SPIE - The International Society for Optical Engineering
4 Conference Proceedings Application of chemically amplified resist to 10-keV e-beam system

Ahn,S., Kim,C., Yang,S.-H., Moon,S.-Y., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
10 Conference Proceedings Analysis of dry etch loading effect in mask fabrication

Lee,J.-Y., Cho,S.-Y., Kim,C.-H., Lee,S.-W., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
5 Conference Proceedings Vacuum delay effect of CAR in mask fabrication

Kim,C.-H., Jeon,C.-U., Han,S.-J., Cho,W.-I., Choi,S.-W., Han,W.-S., Sohn,J.-M.

SPIE-The International Society for Optical Engineering
11 Conference Proceedings Evaluation of an advanced chemically amplified resist for next-generation lithography mask fabrication

Magg,C., Lercel,M.J., Lawliss,M., Kwong,R.W., Huang,W.-S., Angelopoulos,M.

SPIE-The International Society for Optical Engineering
6 Conference Proceedings Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production

Jeong, W.-G., Park, D.-I., Park, E.-S., Seo, S.-K., Kwon, H.-J., Kim, J.-M., Jung, S.-M., Choi, S.-S.

SPIE-The International Society for Optical Engineering
12 Conference Proceedings Mask technology for 0.18-ｦﾌm device generation

Sohn,J.M., Choi,S.W., Kim,B.G., Cho,H.K., Yoon,H.S.

SPIE-The International Society for Optical Engineering
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12